(China (Mainland))
Product Summary
Parametrics
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 21nC @ 10V
Power - Max: 2.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Current - Continuous Drain (Id) @ 25° C: 2.5A
Input Capacitance (Ciss) @ Vds: 850pF @ 25V
Manufacturer: STMicroelectronics
Series: STripFET™
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.5A, 10V
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Pricing (USD) |
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