(China (Mainland))
Product Summary
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. 2N3055 is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
Parametrics
2N3055 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 100 V; (2)VCER, Collector-Emitter Voltage (RBE ￡ 100W): 70 V; (3)VCEO, Collector-Emitter Voltage (IB = 0): 60 V; (4)VEBO, Emitter-Base Voltage (IC = 0): 7 V; (5)IC, Collector Current: 15 A; (6)IB, Base Current: 7 A; (7)Ptot, Total Dissipation at Tc≤25℃: 115 W; (8)Tstg, Storage Temperature: -65 to 200℃; (9)Tj, Max. Operating Junction Temperature: 200℃.
Features
2N3055 features: (1)STMicroelectronics preferred salestypes; (2)complementary npn-pnp devices.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N3055 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Power Switching |
Data Sheet |
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2N3055_MJ2955 |
Other |
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Data Sheet |
Negotiable |
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2N3055A |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
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2N3055AG |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
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2N3055E |
Other |
|
Data Sheet |
Negotiable |
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2N3055G |
ON Semiconductor |
Transistors Bipolar (BJT) NPN 15A 60V |
Data Sheet |
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2N3055H |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
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|
2N3055HG |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
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