(China (Mainland))
Product Summary
The SI5402DC-T1 is a N-Channel 30-V (D-S) MOSFET.
Parametrics
Absolute maximum ratings: (1)drain-source voltage, VDS: 30V; (2)gate-sourve voltage, VGSL: ±20V; (3)pulsed drain current, IDML ±20A; (4)soldering recommedations (peak temperature): 260℃.
Features
Specifications: (1)Gate Threshold Voltage, VGS(th): 1.0 V min; (2)Gate-Body Leakage, IGSS: ±100 nA max when VDS = 0 V, VGS = ±20 V ; (3)On-State Drain Current, ID(on): 20 A min ; (4)Diode Forward Voltagea, VSD: 0.8V type, 1.2 V max when IS = 1.1 A, VGS = 0 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI5402DC-T1 |
Vishay/Siliconix |
MOSFET 30V 6.7A 2.5W |
Data Sheet |
Negotiable |
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SI5402DC-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 6.7A 2.5W |
Data Sheet |
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SI5402DC-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V |
Data Sheet |
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