(China (Mainland))
Product Summary
The MRF6V3090NBR5 is a RF power field effect transistor. The MRF6V3090NBR5 is designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. It is suitable for use in broadcast applications.
Parametrics
MRF6V3090NBR5 absolute maximum ratings: (1)Drain--Source Voltage VDSS: -0.5 to +110 Vdc; (2)Gate--Source Voltage VGS: -6.0 to +10 Vdc; (3)Storage Temperature Range Tstg: -65 to +150 ℃; (4)Case Operating Temperature TC: 150 ℃; (5)Operating Junction Temperature (2,3) TJ: 225 ℃.
Features
MRF6V3090NBR5 features: (1)Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power; (2)Characterized with Series Equivalent Large--Signal Impedance Parameters; (3)Internally Input Matched for Ease of Use; (4)Qualified Up to a Maximum of 50 VDD Operation; (5)Integrated ESD Protection; (6)Excellent Thermal Stability; (7)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (8)225℃ Capable Plastic Package; (9)In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Diagrams
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 MRF6V3090NBR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 860MHz 90W TO 272WB4 |
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