(China (Mainland))
Product Summary
The 2N3906 is a PNP General Purpose Amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA.
Parametrics
2N3906 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 40 V; (2)VCBO, Collector-Base Voltage: 40 V; (3)VEBO, Emitter-Base Voltage: 5.0 V; (4)IC, Collector Current - Continuous: 200 mA; (5)TJ, Tstg, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
2N3906 features: (1)PD, Total Device Dissipation: 625mW; Derate above 25℃: 5.0mW/℃; (2)RθJC, Thermal Resistance, Junction to Case: 83.3 ℃/W; (3)RθJA, Thermal Resistance, Junction to Ambient: 200℃/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N3906,116 |
|
TRANS PNP SW HS 200MA 40V TO92 |
Data Sheet |
Negotiable |
|
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 |
2N3906_D28Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
|
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|
2N3906_D29Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
|
||||
|
2N3906_D74Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
|
||||
|
2N3906_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
|
||||
|
2N3906_D81Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
|
||||
|
2N3906_J05Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
|
||||
|
2N3906_J18Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
|
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