(China (Mainland))
Product Summary
The MJD32RL is a complementary power transistor. It is designed for general purpose amplifier and low speed switching applications.
Parametrics
MJD32RL absolute maximum ratings: (1)Collector.Emitter Voltage VCEO: 40 Vdc; (2)Collector.Base Voltage VCB: 40 Vdc; (3)Emitter.Base Voltage VEB: 5 Vdc; (4)Collector Current IC Continuous: 3 Adc; Peak: 5 Adc; (5)Base Current IB: 1 Adc; (6)Total Power Dissipation PD @ TC = 25℃: 15 W, Derate above 25℃: 0.12 W/℃; (7)Total Power Dissipation @ TA = 25℃ PD: 1.56 W; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +150 ℃.
Features
MJD32RL features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves; (2)Straight Lead Version in Plastic Sleeves; (3)Lead Formed Version in 16 mm Tape and Reel; (4)Electrically Similar to Popular TIP31 and TIP32 Series; (5)Epoxy Meets UL 94, V-0 @ 0.125 in; (6)ESD Ratings: Human Body Model, 3B > 8000 V, Machine Model, C > 400 V; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MJD32RL |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 40V 15W PNP |
Data Sheet |
Negotiable |
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MJD32RLG |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 40V 15W PNP |
Data Sheet |
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