(China (Mainland))
Product Summary
The IRF7220TRPBF is a P-Channel MOSFET from International Rectifier. The IRF7220TRPBF utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Parametrics
IRF7220TRPBF absolute maximum ratings: (1)VDS, Drain- Source Voltage: -14 V; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: ±11A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ -4.5V: ±8.8 A; (4)IDM, Pulsed Drain Current: ±88A; (5)PD @TA = 25℃, Power Dissipation: 2.5W; (6)PD @TA = 70℃, Power Dissipation: 1.6W; (7)Linear Derating Factor: 0.02 W/℃; (8)EAS, Single Pulse Avalanche Energy: 110 mJ; (9)VGS, Gate-to-Source Voltage: ± 12 V; (10)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.
Features
IRF7220TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)Lead-Free.
Diagrams
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 IRF7220TRPBF |
International Rectifier |
MOSFET MOSFT PCh -12V -11A 12mOhm 84nC |
Data Sheet |
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