Product Summary
The BD681 is a plastic, medium-power silicon NPN Darlington transistor. The device can be used as output devices in complementary general-purpose amplifier applications.
Parametrics
BD681 absolute maximum ratings: (1)collector-emitter voltage, VCEO: 45Vdc; (2)collector-base voltage, VCBO: 100Vdc; (3)emitter-base voltage, VEBO: 5.0Vdc; (4)collector current, IC: 4.0Adc; (5)base current, IB: 1.0Adc; (6)total device dissipation @Tc=25℃, PD: 40W; 0.32W/℃ when derate above 25℃; (7)operating and storage junction temperature range, Tj, Tstg: -55 to 150℃.
Features
BD681 features: (1)High DC Current Gain: hFE = 750 (Min) @ IC= 1.5 and 2.0 Adc; (2)Monolithic Construction; (3)681 is complementary with 682; (4)Pb-Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BD681 |
![]() STMicroelectronics |
![]() Transistors Darlington NPN Power Darlington |
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![]() BD681G |
![]() ON Semiconductor |
![]() Transistors Darlington 4A 100V Bipolar Power NPN |
![]() Data Sheet |
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![]() BD681S |
![]() Fairchild Semiconductor |
![]() Transistors Darlington NPN Epitaxial Sil |
![]() Data Sheet |
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![]() BD681STU |
![]() Fairchild Semiconductor |
![]() Transistors Darlington NPN Epitaxial Sil |
![]() Data Sheet |
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