Product Summary
The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ211 has low on-state resistance and excellent switching characteristics. The 2SJ211 is suitable for driving actuators such as motors, relays, and solenoids.
Parametrics
2SJ211 absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V): -100V; (2)Gate to Source Voltage (VDS = 0 V): ±20V; (3)Drain Current (DC): ±200mA; (4)Drain Current (pulse): ±400mA; (5)Total Power Dissipation: 200mW; (6)Channel Temperature: 150℃; (7)Storage Temperature: -55℃ to +150℃.
Features
2SJ211 features: (1) Directly driven by ICs having a 5 V power supply; (2)Not necessary to consider driving current because of its high input impedance; (3)Possible to reduce the number of parts by omitting the bias resistor.
Diagrams
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![]() 2SJ200 |
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![]() 2SJ200-Y(F) |
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![]() MOSFET P-CH 180V 10A TO-3PN |
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![]() 2SJ201 |
![]() Other |
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![]() 2SJ201-Y(F) |
![]() Toshiba |
![]() MOSFET MOSFET P-Ch 200V 12A Rdson 0.625 Ohm |
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![]() Negotiable |
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![]() 2SJ203 |
![]() Other |
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![]() Negotiable |
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![]() 2SJ204 |
![]() Other |
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![]() Negotiable |
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