(China (Mainland))
Product Summary
The TIP122 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. The TIP122 is intented for use in power linear and switching applications.
Parametrics
TIP122 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 100 V; (2)VCEO, Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO, Emitter-Base Voltage (IC = 0): 5 V; (4)IC, Collector Current: 5 A; (5)ICM, Collector Peak Current: 8 A; (6)IB, Base Current: 0.1 A; (7)Ptot, total dissipation: 65W when Tcase≤25℃; 2W when Tamb≤25℃ ; (8)Tstg, Storage Temperature: -65 to 150℃; (9)Tj, Max. Operating Junction Temperature: 150℃.
Features
TIP122 features: (1)ICEO, collector cut-off current (IB=0): 0.5mA when VCE=30V; (2)ICBO, collector cut-off current (IB=0): 0.2mA when VCB=60V; (3)IEBO, emitter cut-off current (IC=0): 2mA when VEB=5V; (4)VCE(sus), collector-emitter sustaining voltage (IB=0): 100V when IC=30mA; (5)VCE(sat), collector-emitter saturation voltage: 2V when IC=3A, IB=12mA; 4V when IC=5A, IB=20mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 TIP122 |
STMicroelectronics |
Transistors Darlington NPN Power Darlington |
Data Sheet |
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TIP122-BP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) NPN 100V 5A 65W |
Data Sheet |
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TIP122F |
Other |
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Data Sheet |
Negotiable |
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TIP122FP |
STMicroelectronics |
Transistors Darlington NPN Power Darlington |
Data Sheet |
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TIP122G |
ON Semiconductor |
Transistors Darlington 5A 100V Bipolar Power NPN |
Data Sheet |
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TIP122-S |
Bourns |
Transistors Darlington NPN DARLINGTON 100V 5A |
Data Sheet |
Negotiable |
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TIP122TU |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Darl |
Data Sheet |
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TIP122TU_NWDC002 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Darl |
Data Sheet |
Negotiable |
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