(China (Mainland))
Product Summary
The NDS9435 is a P-Channel enhancement mode power field effect transistor. It is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
Absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -30 V; (2)VGSS, Gate-Source Voltage: ± 20 V; (3)ID, Drain Current: Continuous: ± 5.3 A; Pulsed ± 20A; (4)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.
Features
Features: (1)-5.3A, -30V, RDS(ON) = 0.05W @ VGS = -10V; RDS(ON) = 0.07W @ VGS = -6V; RDS(ON) = 0.09W @ VGS = -4.5V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 NDS9435A |
Fairchild Semiconductor |
MOSFET -30V -5.3A P-CH |
Data Sheet |
Negotiable |
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|
NDS9435A_D84Z |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench MOSFET |
Data Sheet |
Negotiable |
|
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|
NDS9435A_Q |
Fairchild Semiconductor |
MOSFET -30V -5.3A P-CH |
Data Sheet |
Negotiable |
|
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