Product Summary

The SPD06N80C3 is a cool MOS power transistor.

Parametrics

SPD06N80C3 absolute maximum ratings: (1)Continuous drain current: TA=25℃,6A; TA=100℃,3.8A; (2)Pulsed drain current: TA=25℃,18A; (3)Avalanche energy, single: ID=1.2 A, VDD=50V, 230 mJ; (4)Avalanche energy, repetitive t AR: ID=6 A, VDD=50V, 0.2mJ; (5)Avalanche current, repetitive t AR: 6A; (6)MOSFET dv /dt ruggedness: VDS=0 to 640 V, 50V/ns; (7)Gate source voltage: static ±20V; (8)Gate source voltage: AC (f ＞1 Hz) ±30V; (9)Power dissipation: TA=25℃ 83W; (10)Operating and storage temperature: -55℃ to 150℃; (11)Continuous diode forward current TA=25℃:IS=6A; (12)Diode pulse current TA=25℃:IS,pulse 18A; (13)Reverse diode dv /dt: 4V/ns.

Features

SPD06N80C3 features: (1)New revolutionary high voltage technology; (2)Extreme dv/dt rated; (3)High peak current capability; (4)Qualified according to JEDEC1) for target applications; (5)Pb-free lead plating; RoHS compliant; (6)Ultra low gate charge; (7)Ultra low effective capacitances.

Diagrams

SPD06N80C3 Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPD06N80C3
SPD06N80C3
Infineon Technologies
MOSFET COOL MOS POWER TRANSISTOR
Data Sheet
0-1: $1.50
1-10: $1.36
10-100: $1.11
100-500: $1.04
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(USD)		 Quantity
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Data Sheet
0-1: $0.68
1-10: $0.54
10-100: $0.46
100-500: $0.39
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0-1: $0.64
1-10: $0.57
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100-500: $0.42
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Data Sheet
0-1550: $0.29
1550-2000: $0.24
2000-2500: $0.24
2500-5000: $0.23