Product Summary

The SPB20N60C3 is a Cool MOS Power Transistor.

Parametrics

SPB20N60C3 absolute maximum ratings: (1)Continuous drain current ID: 20.7 A; (2)Pulsed drain current, tp limited by Tjmax ID puls: 62.1 A; (3)Avalanche energy, single pulse ID=10A, VDD=50V EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID=20A, VDD=50V EAR: 1 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 20 A; (6)Gate source voltage static VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: ±30 V; (8)Power dissipation, TC = 25℃ Ptot: 208 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.

Features

SPB20N60C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

Diagrams

SPB20N60C3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB20N60C3
SPB20N60C3
Infineon Technologies
MOSFET COOL MOS PWR TRANS MAX 650V
Data Sheet
0-605: $1.58
605-1000: $1.33
1000-2000: $1.27
2000-5000: $1.21
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB20N60C2
SPB20N60C2
Other

Data Sheet
Negotiable 
SPB20N60C3
SPB20N60C3
Infineon Technologies
MOSFET COOL MOS PWR TRANS MAX 650V
Data Sheet
0-605: $1.58
605-1000: $1.33
1000-2000: $1.27
2000-5000: $1.21
SPB20N60CFD
SPB20N60CFD
Infineon Technologies
MOSFET COOL MOS 600 V 3.0Ohms
Data Sheet
Negotiable 
SPB20N60S5
SPB20N60S5
Infineon Technologies
MOSFET COOL MOS N-CH 600V 20A
Data Sheet
0-1: $2.56
1-10: $2.30
10-100: $1.87
100-500: $1.70
500-1000: $1.46
SPB21N50C3
SPB21N50C3
Infineon Technologies
MOSFET COOL MOS N-CH 560V 21A
Data Sheet
0-1: $2.32
1-10: $1.86
10-100: $1.70
100-250: $1.37
SPB21N10T
SPB21N10T

MOSFET N-CH 100V 21A D2PAK
Data Sheet
Negotiable