(China (Mainland))
Product Summary
The SPB20N60C3 is a Cool MOS Power Transistor.
Parametrics
SPB20N60C3 absolute maximum ratings: (1)Continuous drain current ID: 20.7 A; (2)Pulsed drain current, tp limited by Tjmax ID puls: 62.1 A; (3)Avalanche energy, single pulse ID=10A, VDD=50V EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID=20A, VDD=50V EAR: 1 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 20 A; (6)Gate source voltage static VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: ±30 V; (8)Power dissipation, TC = 25℃ Ptot: 208 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.
Features
SPB20N60C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SPB20N60C3 |
Infineon Technologies |
MOSFET COOL MOS PWR TRANS MAX 650V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SPB2 |
Hammond Manufacturing |
Enclosures, Boxes, & Cases SWING PANEL BRACKET |
Data Sheet |
Negotiable |
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SPB20N60C2 |
Other |
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Data Sheet |
Negotiable |
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SPB20N60C3 |
Infineon Technologies |
MOSFET COOL MOS PWR TRANS MAX 650V |
Data Sheet |
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SPB20N60CFD |
Infineon Technologies |
MOSFET COOL MOS 600 V 3.0Ohms |
Data Sheet |
Negotiable |
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SPB21N10 |
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MOSFET N-CH 100V 21A D2PAK |
Data Sheet |
Negotiable |
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SPB21N10 G |
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MOSFET N-CH 100V 21A D2PAK |
Data Sheet |
Negotiable |
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