Product Summary

The SPB20N60C3 is a Cool MOS Power Transistor.

Parametrics

SPB20N60C3 absolute maximum ratings: (1)Continuous drain current ID: 20.7 A; (2)Pulsed drain current, tp limited by Tjmax ID puls: 62.1 A; (3)Avalanche energy, single pulse ID=10A, VDD=50V EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID=20A, VDD=50V EAR: 1 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax IAR: 20 A; (6)Gate source voltage static VGS: ±20 V; (7)Gate source voltage AC (f >1Hz) VGS: ±30 V; (8)Power dissipation, TC = 25℃ Ptot: 208 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.

Features

SPB20N60C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

Diagrams

SPB20N60C3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB20N60C3
SPB20N60C3
Infineon Technologies
MOSFET COOL MOS PWR TRANS MAX 650V
Data Sheet
0-605: $1.58
605-1000: $1.33
1000-2000: $1.27
2000-5000: $1.21
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB200UFA
SPB200UFA
Other

Data Sheet
Negotiable 
SPB20N60C2
SPB20N60C2
Other

Data Sheet
Negotiable 
SPB20N60C3
SPB20N60C3
Infineon Technologies
MOSFET COOL MOS PWR TRANS MAX 650V
Data Sheet
0-605: $1.58
605-1000: $1.33
1000-2000: $1.27
2000-5000: $1.21
SPB20N60S5
SPB20N60S5
Infineon Technologies
MOSFET COOL MOS N-CH 600V 20A
Data Sheet
0-1: $2.56
1-10: $2.30
10-100: $1.87
100-500: $1.70
500-1000: $1.46
SPB21N10
SPB21N10

MOSFET N-CH 100V 21A D2PAK
Data Sheet
Negotiable 
SPB21N10 G
SPB21N10 G

MOSFET N-CH 100V 21A D2PAK
Data Sheet
Negotiable