(China (Mainland))
Product Summary
The SI4410DY-T1 is an N-channel 30-V (D-S) MOSFET.
Parametrics
SI4410DY-T1 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃): TA=25℃, ID=10A, TA=70℃, ID= 8A; (4)Pulsed Drain Current: IDM= 50A; (5)Continuous Source Current (Diode Conduction): IS=2.3A; (6)Maximum Power Dissipation: TA=25℃, PD=2.5W, TA=70℃, PD=1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to +150℃.
Features
SI4410DY-T1 feature: TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4410DY-T1-A-E3 |
Vishay/Siliconix |
MOSFET 30V 10A 2.5W |
Data Sheet |
Negotiable |
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SI4410DY-T1-REVA |
Vishay/Siliconix |
MOSFET 30V 10A 2.5W |
Data Sheet |
Negotiable |
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