Product Summary
The NDF04N62ZG is an N-channel power MOSFET.
Parametrics
NDF04N62ZG absolute maximum ratings: (1)Drain−to−Source Voltage VDSS: 620 V; (2)Pulsed Drain Current, VGS @ 10 V IDM: 18A; (3)Power Dissipation RθJC PD: 96W; (4)Gate−to−Source Voltage VGS: ±30 V; (5)Single Pulse Avalanche Energy, ID = 6.0 A EAS: 120 mJ; (6)ESD (HBM)(JESD 22−A114)Vesd: 3000 V; (7)RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25℃)(Figure 14)VISO: 4500V; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Continuous Source Current (Body Diode)IS: 6.0 A.
Features
NDF04N62ZG features: (1)Low ON Resistance; (2)Low Gate Charge; (3)100% Avalanche Tested; (4)These Devices are Pb−Free and RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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NDF04N62ZG |
ON Semiconductor |
MOSFET NFET TO220FP 620V 2 OHM |
Data Sheet |
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NDF02N60ZG |
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NDF03N60ZH |
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NDF04N60ZG |
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NDF04N60ZH |
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