Product Summary
The MTB75N05HDT4 is a power MOSFET. The MTB75N05HDT4 has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB75N05HDT4 is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Parametrics
MTB75N05HDT4 absolute maximum ratings: (1)Drain–to–Source Voltage VDSS: 50Volts; (2)Drain–to–Gate Voltage (RGS = 1.0 MW) VDGR: 50Volts; (3)Gate–to–Source Voltage - Continuous VGS: ±20V; (4)Drain Current - Continuous: 75Amps; (5)Drain Current - Continuous @ 100℃: 65Amps; (6)Drain Current - Single Pulse (tp 3 10 μs): 225Amps; (7)Total Power Dissipation: 125Watts; (8)Derate above 25℃: 1.0W/℃; (9)Total Power Dissipation @ TA = 25℃ (minimum footprint, FR–4 board): 2.5Watts; (10)Operating and Storage Temperature Range: –55℃ to 150℃; (11)Single Pulse Drain–to–Source Avalanche Energy - Starting TJ = 25℃(VDD = 25V, VGS = 10V, Peak IL = 75A, L = 0.177mH, RG = 25Ω): 500 mJ; (12)Thermal Resistance - Junction to Case: 1.0℃/W; (13)Thermal Resistance - Junction to Ambient: 62.5℃/W; (14)Thermal Resistance - Junction to Ambient (minimum footprint, FR–4 board): 50℃/W; (15)Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds: 260℃.
Features
MTB75N05HDT4 features: (1)Avalanche Energy Specified; (2)Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; (3)Diode is Characterized for Use in Bridge Circuits; (4)IDSS and VDS(on) Specified at Elevated Temperature; (5)Short Heatsink Tab Manufactured ?Not Sheared; (6)Specially Designed Leadframe for Maximum Power Dissipation; (7)Available in 24 mm 13-inch/800 Unit Tape and Reel, Add T4 Suffix to Part Number.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MTB75N05HDT4 |
MOSFET N-CH 50V 75A D2PAK-3 |
Data Sheet |
Negotiable |
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Other |
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MTB75N05HDT4 |
MOSFET N-CH 50V 75A D2PAK-3 |
Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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