Product Summary

The MT58L64L32FT-10A is a flow-through syncburst SRAM. It employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The MT58L64L32FT-10A integrates a 128K x 18, 64K x 32, or 64K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input (CLK).

Parametrics

MT58L64L32FT-10A absolute maximum ratings: (1)Voltage on VDD Supply: Relative to VSS:-0.5V to +4.6V; (2)Voltage on VDDQ Supply: Relative to VSS:-0.5V to +4.6V; (3)VIN:-0.5V to VDDQ + 0.5V; (4)Storage Temperature (plastic):-55℃ to +150℃; (5)Junction Temperature:+150℃; (6)Short Circuit Output Current:100mA.

Features

MT58L64L32FT-10A features: (1)Fast clock and OE# access times; (2)Single +3.3V +0.3V/-0.165V power supply (VDD); (3)Separate +3.3V or +2.5V isolated output buffer supply (VDDQ); (4)SNOOZE MODE for reduced-power standby; (5)Common data inputs and data outputs; (6)Individual BYTE WRITE control and GLOBAL WRITE; (7)Three chip enables for simple depth expansion and address pipelining; (8)Clock-controlled and registered addresses, data I/Os and control signals; (9)Internally self-timed WRITE cycle; (10)Burst control pin (interleaved or linear burst); (11)Automatic power-down; (12)100-pin TQFP package; (13)Low capacitive bus loading; (14)x18, x32, and x36 versions available.

Diagrams

MT58L128L18D
MT58L128L18D
Other

Data Sheet
Negotiable 
MT58L128L18F,
MT58L128L18F,
Other

Data Sheet
Negotiable 
MT58L128L32D1
MT58L128L32D1
Other

Data Sheet
Negotiable 
MT58L128L36D1
MT58L128L36D1
Other

Data Sheet
Negotiable 
MT58L1MY18D
MT58L1MY18D
Other

Data Sheet
Negotiable 
MT58L256L18D1
MT58L256L18D1
Other

Data Sheet
Negotiable