(China (Mainland))
Product Summary
The MPSA56 is an Amplifier Transistor.
Parametrics
MPSA56 asbolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80Vdc; (2)Collector-Base Voltage, VCBO: 80Vdc; (3)Emitter-Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current-Continuous: IC 500 mAdc; (5)Total Device Dissipation @ TA = 25℃, PD: 625mW; Derate above 25℃: 5.0mW/℃; (6)Total Device Dissipation,@ TC = 25℃, PD: 1.5Watts; (7)Derate above 25℃: 12mW/℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.
Features
MPSA56 features: (1)Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0), V(BR)CEO: 80Vdc; (2)Emitter-Base Breakdown Voltage (IE = 100μAdc, IC = 0), V(BR)EBO: 4.0Vdc; (3)Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES: 0.1μAdc; (4)Collector Cutoff Current, (VCB = 80 Vdc, IE = 0), ICBO: 0.1mAdc.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MPSA56 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Med Power |
Data Sheet |
|
|
||||||||||||
 |
MPSA56 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS HV TAPE RADIAL |
Data Sheet |
Negotiable |
|
||||||||||||
 |
MPSA56,116 |
|
TRANS PNP 80V 500MA SOT54 |
Data Sheet |
Negotiable |
|
||||||||||||
|
MPSA56\E6 |
Vishay Semiconductors |
Transistors Bipolar (BJT) REORD 512-MPSA56 |
Data Sheet |
Negotiable |
|
||||||||||||
|
MPSA56_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
|
|
||||||||||||
|
MPSA56_D26Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
|
||||||||||||
|
MPSA56_D27Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP General Purpose Transistor |
Data Sheet |
|
|
||||||||||||
|
MPSA56_D27Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP General Purpose Transistor |
Data Sheet |
Negotiable |
|
||||||||||||
