(China (Mainland))
Product Summary
The MMDT5401-7-F is a dual pnp small signal surface mount transistor.
Parametrics
MMDT5401-7-F absolute maximum ratings: (1)Collector-Base Voltage VCBO: -160 V; (2)Collector-Emitter Voltage VCEO: -150 V; (3)Emitter-Base Voltage VEBO: -5.0 V; (4)Collector Current - Continuous IC: -200 mA; (5)Power Dissipation Pd: 200 mW; (6)Operating and Storage and Temperature Range Tj, TSTG: -55 to +150℃.
Features
MMDT5401-7-F features: (1)Epitaxial Planar Die Construction; (2)Complementary NPN Type Available (MMDT 5551); (3)Ideal for Medium Power Amplification and Switching; (4)Ultra-Small Surface Mount Package; (5)Lead Free/RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MMDT5401-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) -150V 200mW |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MMDT2222A |
Other |
|
Data Sheet |
Negotiable |
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MMDT2222A-7 |
Diodes Inc. |
Transistors Bipolar (BJT) 40V 200mW |
Data Sheet |
Negotiable |
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MMDT2222A-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) 40V 200mW |
Data Sheet |
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MMDT2222A-T |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 600mA 40V |
Data Sheet |
Negotiable |
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MMDT2222A-TP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 600mA 40V |
Data Sheet |
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MMDT2222V |
Other |
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Data Sheet |
Negotiable |
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