Product Summary

The IRFB4110GPBF is a HEXFET power MOSFET. It is used in High Efficiency Synchronous Rectification in SMPS, uninterruptible Power Supply, high Speed Power Switching, hard Switched and High Frequency Circuits.

Parametrics

IRFB4110GPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 180 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 130 A; (3)IDM Pulsed Drain Current: 670 A; (4)PD @TC = 25℃ Power Dissipation: 370 W; (5)Linear Derating Factor: 2.5 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)dv/dt Peak Diode Recovery: 5.3 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (12)Soldering Temperature, for 10 seconds(1.6mm from case ): 300 ℃.

Features

IRFB4110GPBF features: (1)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free, (5)Halogen-Free.

Diagrams

IRFB4110GPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB4110GPBF
IRFB4110GPBF
International Rectifier
MOSFET MOSFT 100V 180A 4.5mOhm 150nC
Data Sheet
0-1: $3.26
1-25: $2.23
25-100: $1.66
100-250: $1.59
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB11N50A
IRFB11N50A
Vishay/Siliconix
MOSFET N-Chan 500V 11 Amp
Data Sheet
0-725: $1.93
725-1000: $1.85
1000-2000: $1.81
IRFB11N50APBF
IRFB11N50APBF
Vishay/Siliconix
MOSFET N-Chan 500V 11 Amp
Data Sheet
0-1: $1.07
1-10: $0.86
10-100: $0.77
100-250: $0.69
IRFB13N50A
IRFB13N50A
Vishay/Siliconix
MOSFET N-Chan 500V 14 Amp
Data Sheet
0-725: $2.48
725-1000: $2.38
1000-2000: $2.32
IRFB13N50APBF
IRFB13N50APBF
Vishay/Siliconix
MOSFET N-Chan 500V 14 Amp
Data Sheet
0-1: $2.11
1-10: $1.69
10-100: $1.54
100-250: $1.39
IRFB16N50K
IRFB16N50K
Vishay/Siliconix
MOSFET N-Chan 500V 17 Amp
Data Sheet
Negotiable 
IRFB16N50KPBF
IRFB16N50KPBF
Vishay/Siliconix
MOSFET N-Chan 500V 17 Amp
Data Sheet
Negotiable