Product Summary

The IRF7204PBF is a power MOSFET. Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Parametrics

IRF7204PBF absolute maximum ratings: (1)ID @ TA=25℃, Continuous Drain Current, VGS @10V: -5.3A; (2)ID @ TA=70℃, Continuous Drain Current, VGS @10V: -4.2A; (3)IDM, Pulsed Drain Current: -21A; (4)PD @ TC=25℃, Power Dissipation: 2.5W; (5)PD @ TC=25℃, Linear Derating Factor: 0.02W/℃; (6)VGS, Gate-to-Source Voltage: ±12V; (7)dv/dt, Peak Diode Recovery dv/dt: -1.7V/nS; (8)Junction and Storage Temperature Range: -55℃ to +150℃.

Features

IRF7204PBF features: (1) Advanced Process Technology; (2) Ultra Low On-resistance; (3) P-Channel MOSFET; (4)Surface mount; (5)Available in tape and reel ; (6)Fasting Switching; (7)Lead-Free.

Diagrams

IRF7204PBF Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7204PBF
IRF7204PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.70
1-25: $0.41
25-100: $0.25
100-250: $0.24
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(USD)		 Quantity
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