Product Summary
The D44H11 is a complementary silicon power transistor. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Parametrics
D44H11 absolute maxing ratings: (1)Collector-Emitter Voltage VCEO: 80Vdc; (2)Emitter Base Voltage VEB: 5.0 Vdc; (3)Collector Current IC- Continuous: 10Adc; - Peak: 20Adc; (4)Total Power Dissipation PD @ TC = 25℃: 70W; @ TA = 25℃: 2.0W; (5)Operating and Storage Junction Temperature Range TJ, Tstg: -55 to +150 ℃.
Features
D44H11 features: (1)Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A; (2)Fast Switching Speeds; (3)Complementary Pairs Simplifies Designs; (4)Pb-Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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D44H11 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Gen Pur Switch |
Data Sheet |
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D44H11E3 |
Other |
Data Sheet |
Negotiable |
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D44H11FP |
TRANS NPN 80V 10A TO-220FP |
Data Sheet |
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D44H11G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 80V 50W NPN |
Data Sheet |
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D44H11J3 |
Other |
Data Sheet |
Negotiable |
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D44H11TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN/80V/8A |
Data Sheet |
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