(China (Mainland))
Product Summary
Parametrics
Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 2A
Power - Max: 1.6W
Vgs(th) (Max) @ Id: -
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1A, 4V
Gate Charge (Qg) @ Vgs: 4.2nC @ 4V
Input Capacitance (Ciss) @ Vds: 325pF @ 20V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 CPH6429-TL-E |
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Data Sheet |
Negotiable |
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Pricing (USD) |
Quantity | ||||||||||||
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CPH6020-TL-E |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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CPH6201 |
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Data Sheet |
Negotiable |
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