Product Summary

The BD238 is a silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package. The device is inteded for use in medium power linear and switching applications.

Parametrics

BD238 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 100 V; (2)VCER, Collector-Base Voltage (RBE = 1KW): 100 V; (3)VCEO, Collector-Emitter Voltage (IB = 0): 80 V; (4)VEBO, Emitter-Base Voltage (IC = 0) :5 V; (5)IC, Collector Current: 2 A; (6)ICM, Collector Peak Current (tp < 5 ms): 6 A; (7)Ptot, Total Dissipation at Tc = 25℃: 25 W; (8)Tstg, Storage Temperature: -65 to 150℃; (9)Tj, Max. Operating Junction Temperature: 150℃.

Features

BD238 features: (1)STMicroelectronics preferred salestypes.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BD238
BD238
STMicroelectronics
Transistors Bipolar (BJT) PNP General Purpose
Data Sheet
0-1: $0.25
1-10: $0.24
10-100: $0.22
100-250: $0.20
BD238G
BD238G
ON Semiconductor
Transistors Bipolar (BJT) 2A 80V 25W PNP
Data Sheet
Negotiable 
BD238S
BD238S
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
0-1: $0.29
1-25: $0.26
25-100: $0.23
100-250: $0.15
BD238STU
BD238STU
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
0-1: $0.22
1-25: $0.19
25-100: $0.17
100-250: $0.11