Product Summary

The BD238 is a silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package. The device is inteded for use in medium power linear and switching applications.

Parametrics

BD238 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 100 V; (2)VCER, Collector-Base Voltage (RBE = 1KW): 100 V; (3)VCEO, Collector-Emitter Voltage (IB = 0): 80 V; (4)VEBO, Emitter-Base Voltage (IC = 0) :5 V; (5)IC, Collector Current: 2 A; (6)ICM, Collector Peak Current (tp < 5 ms): 6 A; (7)Ptot, Total Dissipation at Tc = 25℃: 25 W; (8)Tstg, Storage Temperature: -65 to 150℃; (9)Tj, Max. Operating Junction Temperature: 150℃.

Features

BD238 features: (1)STMicroelectronics preferred salestypes.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BD238G
BD238G
ON Semiconductor
Transistors Bipolar (BJT) 2A 80V 25W PNP
Data Sheet
Negotiable 
BD238STU
BD238STU
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
0-1: $0.22
1-25: $0.19
25-100: $0.17
100-250: $0.11
BD238S
BD238S
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
0-1: $0.29
1-25: $0.26
25-100: $0.23
100-250: $0.15
BD238
BD238
STMicroelectronics
Transistors Bipolar (BJT) PNP General Purpose
Data Sheet
0-1: $0.25
1-10: $0.24
10-100: $0.22
100-250: $0.20