(China (Mainland))
Product Summary
The 2SA1413-Z-E1-AZ is a PNP silicon triple diffused transistor. It is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.
Parametrics
2SA1413-Z-E1-AZ absolute maximum ratings: (1)Collector to base voltage VCBO: -600 V; (2)Collector to emitter voltage VCEO: -600 V; (3)Base to emitter voltage VEBO: -7 V; (4)Collector current (DC) IC(DC): -1.0 A; (5)Collector current (pulse) IC(pulse): -2.0 A; (6)Total power dissipation (TA = 25℃) PT: 2.0 W; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature Tstg: -55 to +150 ℃.
Features
2SA1413-Z-E1-AZ features: (1)High Voltage: VCEO = -600 V; (2)High Speed: tf ≤ 1.0 μs; (3)Complement to 2SC3632-Z.
Diagrams
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 2SA1006 |
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2SA1006A |
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2SA1006B |
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2SA1008 |
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2SA1009 |
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2SA1009A |
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