Product Summary
The TC7SU04FTE85L is a high speed C2MOS Inverter fabricated with silicon gate C2MOS technology. The TC7SU04FTE85L achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of single stages inverter, it can be applied for crystal oscillation. The input is equipped with protection circuits against static discharge or transient excess voltage. Output currents are 1/2 compared to TC74HC series models.
Parametrics
TC7SU04FTE85L absolute maximum ratings: (1)Supply voltage range VCC: -0.5 to 5 V; (2)DC input voltage VIN: -0.5 to VCC + 0.5 V; (3)DC output voltage VOUT: -0.5 to VCC + 0.5 V; (4)Input diode current IIK: ±20 mA; (5)Output diode current IOK: ±20 mA; (6)DC output current IOUT: ±12.5 mA; (7)DC VCC/ground current ICC: ±25 mA; (8)Power dissipation PD: 200 mW; (9)Storage temperature range Tstg: -65℃ to 150℃; (10)Lead temperature (10 s) TL: 260℃.
Features
TC7SU04FTE85L features: (1)High speed: tpd = 7 ns (typ.) at VCC = 5 V; (2)Low power dissipation: ICC = 1 μA (max) at Ta = 25℃; (3)High noise immunity: VNIH = VNIL = 28% VCC (min); (4)Output drive capability: 5 LSTTL loads; (5)Symmetrical output impedance: |IOH| = IOL = 2 mA (min); (6)Balanced propagation delay time: tpLH ≈ tpHL; (7)Wide operating voltage range: VCC (opr) = 2 to 6 V.
Diagrams
TC7S00F(T5L,F,T) |
IC GATE NAND 2INP 74HC00 5-SSOP |
Data Sheet |
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TC7S00F(TE85L) |
IC GATE NAND 2INP 74HC00 5-SSOP |
Data Sheet |
Negotiable |
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TC7S00F(TE85L,F) |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FUT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S02F(T5L,F,T) |
Toshiba (VA) |
IC GATE NOR 2INPUT 74HC02 5-SSOP |
Data Sheet |
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