Product Summary

The STD12NF06LT4 is a STripFET II Power MOSFET. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The STD12NF06LT4 is used in Switching application.

Parametrics

STD12NF06LT4 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 60 V; (2)VDGR Drain-gate voltage (RGS = 20KΩ): 60 V; (3)VGS Gate-source voltage: ±16 V; (4)ID Drain current (continuous) at TC = 25℃: 12 A; (5)ID Drain current (continuous) at TC=100℃: 8.5 A; (6)IDM Drain current (pulsed): 48 A; (7)PTOT Total dissipation at TC = 25℃: 30 W; (8)Derating factor: 0.2 W/℃; (9)dv/dt Peak diode recovery voltage slope: 15 V/ns; (10)EAS Single pulse avalanche energy: 100 mJ; (11)Tstg Storage temperature: -55 to 175 ℃; (12)TJ Max. operating junction temperature: -55 to 175 ℃.

Features

STD12NF06LT4 features: (1)Exceptional dv/dt capability; (2)Low gate charge.

Diagrams

STD12NF06LT4 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STD12NF06LT4
STD12NF06LT4

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Data Sheet

0-1: $0.60
1-10: $0.46
10-100: $0.40
100-250: $0.35
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(USD)
Quantity
STD10
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Data Sheet

0-20: $5.44
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Data Sheet

0-1: $0.07
1-10: $0.06
10-100: $0.05
100-500: $0.04
STD100BLK
STD100BLK

VCC

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Data Sheet

0-1: $0.10
1-10: $0.08
10-100: $0.08
100-500: $0.06
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Data Sheet

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Data Sheet

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Data Sheet

0-1660: $0.55
1660-2000: $0.48
2000-2500: $0.48
2500-5000: $0.47