Product Summary
The STD12NF06LT4 is a STripFET II Power MOSFET. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The STD12NF06LT4 is used in Switching application.
Parametrics
STD12NF06LT4 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 60 V; (2)VDGR Drain-gate voltage (RGS = 20KΩ): 60 V; (3)VGS Gate-source voltage: ±16 V; (4)ID Drain current (continuous) at TC = 25℃: 12 A; (5)ID Drain current (continuous) at TC=100℃: 8.5 A; (6)IDM Drain current (pulsed): 48 A; (7)PTOT Total dissipation at TC = 25℃: 30 W; (8)Derating factor: 0.2 W/℃; (9)dv/dt Peak diode recovery voltage slope: 15 V/ns; (10)EAS Single pulse avalanche energy: 100 mJ; (11)Tstg Storage temperature: -55 to 175 ℃; (12)TJ Max. operating junction temperature: -55 to 175 ℃.
Features
STD12NF06LT4 features: (1)Exceptional dv/dt capability; (2)Low gate charge.
Diagrams
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![]() STD12NF06LT4 |
![]() STMicroelectronics |
![]() MOSFET N-Ch 60 Volt 12 Amp |
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