Product Summary

The SI9430DY-T1 is a P-Channel 30-V (D-S) MOSFET. The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55℃ to 125℃ temperature ranges under the pulsed 0V to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Parametrics

SI9430DY-T1 specifications: (1) Gate Threshold Voltage: 2.2V; (2) On-State Drain Current: 117A; (3) Drain-Source On-State Resistance: 0.033Ω; (4) Forward Transconductance: 9.3S; (5) Diode Forward Voltage: -0.76V.

Features

SI9430DY-T1 features: (1)P-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55℃ to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.

Diagrams

SI9430DY-T1 block diagram

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