(China (Mainland))
Product Summary
The SI9400DY-T1 is a P-Channel 20-V (D-S) MOSFET.
Parametrics
SI9400DY-T1 absolute maximum ratings: (1)Drain-Source Voltage: -20V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current: TA=25℃, ±2.5A; TA=70℃, ±2.0A; (4)Pulsed Drain Current: ±10A; (5)Continuous Source Current: -2.0A; (6)Power Dissipation: TA=25℃, 2.5W; TA=70℃, 1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to 150℃.
Features
SI9400DY-T1 specifications: (1)Gate Threshold Voltage VGS(th): -1.0V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -2 μA; (4)On-State Drain Current ID(on): -10 A; (5)Drain-Source On-State Resistance rDS(on): 0.13 to 0.25 Ω; (6)Forward Transconductance gfs: 2.5 S; (7)Diode Forward Voltage VSD: -0.8 to -1.6 V.
Diagrams
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 SI9400DY |
Vishay/Siliconix |
MOSFET 20V 2.5A 2.5W |
Data Sheet |
Negotiable |
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SI9407AEY |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3.0W 120mohm @ 10V |
Data Sheet |
Negotiable |
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