Product Summary
Parametrics
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Input Capacitance (Ciss) @ Vds: -
Series: TrenchFET®
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 4A
Package / Case: PowerPAK? SO-8
Supplier Device Package: PowerPAK? SO-8
Gate Charge (Qg) @ Vgs: 36nC @ 10V
Drain to Source Voltage (Vdss): 150V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power - Max: 1.9W
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI7846DP-T1-E3 |
Vishay/Siliconix |
MOSFET 150V 6.7A 5.2W |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si7802DN |
Other |
Data Sheet |
Negotiable |
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SI7802DN-T1-E3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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SI7802DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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SI7804DN-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 10A 0.0185Ohm |
Data Sheet |
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SI7804DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 10A 3.5W 18.5mohm @ 10V |
Data Sheet |
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SI7806ADN-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 14A 0.011Ohm |
Data Sheet |
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