Product Summary

The SI4431DY-TI is a P-Channel Logic Level PowerTrench MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The SI4431DY-TI is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The SI4431DY-TI is used in DC/DC converter, Load switch, Motor Drive.

Parametrics

SI4431DY-TI absolute maxing ratings: (1)Drain-Source Voltage VDSS: -30 V; (2)Gate-Source Voltage VGSS: ±20 V; (3)Continuous Drain Current ID: -6.3 A; (4)Power Dissipation for Single Operation PD: 2.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI4431DY-TI features: (1)-6.3 A, -30 V. RDS(ON) = 0.032 Ω@ VGS = -10 V, RDS(ON) = 0.05 Ω@ VGS = -4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

SI4431DY-TI diagram

Si4401BDY
Si4401BDY
Other

Data Sheet
Negotiable 
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SI4401DY
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Data Sheet
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Data Sheet
Negotiable