(China (Mainland))
Product Summary
Parametrics
Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 5A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) @ Vds: 1200pF @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: 8-SOP
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 RSS050P03FU6TB |
ROHM Semiconductor |
MOSFET 30V 5A P CHANNEL |
Data Sheet |
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Pricing (USD) |
Quantity | ||||||
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Data Sheet |
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RSS065N06FU6TB |
ROHM Semiconductor |
MOSFET MOSFET; 30V 6.5A N CHANNEL |
Data Sheet |
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