Product Summary

The MRF8S9260HSR3 is an N-Channel Enhancement Mode Lateral MOSFET designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. The MRF8S9260HSR3 can be used in Class AB and Class C for all typical cellular base station modulation formats.

Parametrics

MRF8S9260HSR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +70 Vdc; (2)Gate-Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32 to +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature TJ: 225 ℃; (7)CW Operation @ TC = 25℃: 280W.

Features

MRF8S9260HSR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (6)Optimized for Doherty Applications; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF8P20160HSR3 pin connection

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