Product Summary
The MPSA26 is a NPN Darlington transistor in a TO-92 plastic package.
Parametrics
MPSA26 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 50 V; (2)VCES collector-emitter voltage VBE = 0: 50 V; (3)VEBO emitter-base voltage open collector: 10 V; (4)IC collector current (DC): 500 mA; (5)ICM peak collector current: 1 A; (6)IB base current (DC): 100 mA; (7)Ptot total power dissipation Tamb ≤ 25 ℃: 500 mW; (8)Tstg storage temperature: -65 +150 ℃; (9)Tj junction temperature: 150 ℃; (10)Tamb operating ambient temperature: -65 +150 ℃.
Features
MPSA26 features: (1)High current (max. 500 mA); (2)Low voltage (max. 60 V); (3)High DC current gain (min. 10000).
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() MPSA26 |
![]() Central Semiconductor |
![]() Transistors Darlington NPN Darlington |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() MPSA 42 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() MPSA 43 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() MPSA 92 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() MPSA 93 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() MPSA05 |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) TO-92 NPN GEN PUR |
![]() Data Sheet |
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![]() |
![]() MPSA05_D26Z |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Medium Power |
![]() Data Sheet |
![]() Negotiable |
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