(China (Mainland))
Product Summary
The IRF7311TRPBF is a HEXFET Power MOSFET. The IRF7311TRPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7311TRPBF absolute maximum ratings: (1)Drain-Source Voltage:20V; (2)Gate-Source Voltage:± 12V; (3)Continuous drain current: TA = 25℃:6.6A, TA = 70℃:5.3A; (4)Pulsed Drain Current:26A; (5)Continuous Source Current (Diode Conduction):2.5A; (6)Maximum Power Dissipation: TA = 25℃:2.0W, TA = 70℃:1.3W; (7)Single Pulse Avalanche Energy:100 mJ; (8)Avalanche Current:4.1 A; (9)Repetitive Avalanche Energy :0.20 mJ; (10)Peak Diode Recovery dv/dt:5.0 V/ ns; (11)Junction and Storage Temperature Range:-55℃ to + 150℃.
Features
IRF7311TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual N-Channel MOSFET; (4)Surface Mount; (5)Fully Avalanche Rated.
Diagrams
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 IRF7311TRPBF |
International Rectifier |
MOSFET MOSFT DUAL NCh 20V 6.6A |
Data Sheet |
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