(China (Mainland))
Product Summary
The MMDF2P03HDR2 is a high energy power FET. The MMDF2P03HDR2 is designed to withstand high energy in the avalanche and commutation modes. The MMDF2P03HDR2 offers a drain-to-source diode with a fast recovery time. Designed for Iow-vohage, high-speed switching applications in power supplies, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive, loads are switched and offer addkional safety margin against unexpected voltage transients.
Parametrics
MMDF2P03HDR2 absolute maximum ratings: (1)Drain-to-Source Voltage: 30Vdc; (2)Drian-to-Gate Voltage (RGS =1.0MΩ): 30Vdc; (3)Gate-to-Source Voltage Continuous: ±20Vdc; (4)Drain Current - Continuous @ TA =25℃: 2.0Adc; (5)Drain Current - Continuous @ TA =100℃: 1.6Adc; (6)Drain Current - Single Pulse (TP≤10μs): 6.0ApK; (7)Total Power Dissipation @ TA = 25℃: 1.5 Watts; (8)Operating and Storage Temperature Range: -55℃ to 150℃; (9)Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25℃, VDD=25Vdc, VGS=4.5Vdc, IL=20ApK, L=0.30mH, RG=25Ω: 60mJ; (10)Thermal Resistance— Junction to Ambient: 62.5℃/W; (11)Maximum Lead Temmrature for Soldering Purposes, 1/8 from case for 5 seconds: 260℃.
Features
MMDF2P03HDR2 features: (1)Ultra Low RDS(on), High-Cell Density, HDTMOS; (2)SPICE Parameters Available; (3)Diode is Characterized for Use in Bridge Grcuits; (4)Diode Exhibits High Speed, Yet Soft Recovey; (5)lDss and VDS(on) Specified at Elevated Temperature; (6)Avalanche Energy Specified.
Diagrams
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