(China (Mainland))
Product Summary
The MD7P19130HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET which is designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. The MD7P19130HSR3 is suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cel lular radi o and WLL applications.
Parametrics
MD7P19130HSR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
MD7P19130HSR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MD7P19130HSR3 |
Freescale Semiconductor |
RF Amplifier HV7 1.9GHZ 40W NI780-4S |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
|
MD7P19130HR3 |
Freescale Semiconductor |
RF Amplifier HV7 1.9GHZ 40W NI780-4 |
Data Sheet |
Negotiable |
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 |
MD7P19130HR5 |
Freescale Semiconductor |
Power Driver ICs HV7 1.9GHZ 40W NI780-4 |
Data Sheet |
Negotiable |
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|
MD7P19130HSR3 |
Freescale Semiconductor |
RF Amplifier HV7 1.9GHZ 40W NI780-4S |
Data Sheet |
|
|
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|
MD7P19130HSR5 |
Freescale Semiconductor |
RF Amplifier HV7 1.9GHZ 40W NI780-4S |
Data Sheet |
Negotiable |
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