(China (Mainland))
Product Summary
Parametrics
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Series: HEXFET®
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
Power - Max: 540mW
Manufacturer: International Rectifier
Supplier Device Package: Micro3?/SOT-23
Current - Continuous Drain (Id) @ 25° C: 780mA
Input Capacitance (Ciss) @ Vds: 97pF @ 15V
Gate Charge (Qg) @ Vgs: 3.6nC @ 4.45V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRLML6302TR |
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MOSFET P-CH 20V 780MA SOT-23 |
Data Sheet |
Negotiable |
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 |
IRLML6302TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl |
Data Sheet |
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