IRLI520NPBF

HEXFET Power MOSFET, TO-220, Isolated Package, 2.5KVRMS Voltage Isolation, 30W Power Dissipation

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PartNumber:: IRLI520NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 08+

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Products Upload time: 2011-07-26

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Part Number:IRLI520NPBF
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Product Summary

The IRLI520NPBF is the Fifth Generation HEXFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRLI520NPBF eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

Parametrics

IRLI520NPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 8.1A; (2)Continuous Drain Current, VGS @ 10V: 5.7A; (3)Pulsed Drain Current: 35A; (4)Power Dissipation: 30W; (5)Linear Derating Factor: 0.20 W/℃; (6)Gate-to-Source Voltage: ± 16 V; (7)Single Pulse Avalanche Energy: 85 mJ; (8)Avalanche Current: 6.0 A; (9)Repetitive Avalanche Energy: 3.0 mJ; (10)Peak Diode Recovery dv/dt: 5.0 V/ns; (11)Operating Temperature Range: -55 to 175℃; (12)Soldering Temperature: 300℃.

Features

IRLI520NPBF features: (1)Logic-LeveGate Drive; (2)Advanced Process Technology; (3)Isolated Package; (4)High Voltage Isolation = 2.5KVRMS; (5)Sink to Lead Creepage Dist = 4.8mm; (6)Fully Avalanche Rated.