Product Summary
The IRFP4004PBF is a HEXFET power MOSFET. It is used in High Efficiency Synchronous Rectification in SMPS, uninterruptible Power Supply, high Speed Power Switching, hard Switched and High Frequency Circuits.
Parametrics
IRFP4004PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 350 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 250 A; (3)IDM Pulsed Drain Current: 1390 A; (4)PD @TC = 25℃ Power Dissipation: 380 W; (5)Linear Derating Factor: 2.5 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)dv/dt Peak Diode Recovery: 2.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (12)Soldering Temperature, for 10 seconds(1.6mm from case ): 300 ℃.
Features
IRFP4004PBF features: (1)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.
Diagrams
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![]() IRFP4004PBF |
![]() International Rectifier |
![]() MOSFET MOSFT 40V 350A 1.7mOhm 220nC Qg |
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