IRFP064NPBF

fifth generation HEXFET, 200W, 80A

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Price:: US $0.10~2.00 / piece [Get Latest Price]

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PartNumber:: IRFP064NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-07-26

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Part Number:IRFP064NPBF
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Product Summary

The IRFP064NPBF is a fifth generation HEXFET. The IRFP064NPBF utilizes advanced processing techniques to achieve wxtremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an wxtremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFP064NPBF absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 110A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 80A; (3)IDM, pulsed drain current: 390A; (4)PD@TC=25℃, power dissipation: 200W; (5)linear derating factor: 1.3W/℃; (6)VGS, gate-to-source voltage: ±20V; (7)EVS, single pulse avalanche energy: 480mJ; (8)IAR, avalanche current: 59A; (9)EAR, repetitive avalanche energy: 20mJ; (10)dv/dt, peak diode recovery dv/dt: 5.0V/ns; (11)TJ, TSTG, operating junction and storage temperature range: -55 to +175℃; (12)soldering temperautre for 10 seconds: 300℃ (1.6mm from case); (13)mounting torque, 6-32 or M3 srew: 1.1N·m.

Features

IRFP064NPBF features: (1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175℃ operating temperature; (5)fast switching; (6)fully avalanche rated; (7)lead-free.