IRF9Z34NSTRLPBF

HEXFET power MOSFET, 55V, 19A, D2PAK, 100mOhm, 23.3nC

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Price:: US $0.29~0.29 / piece [Get Latest Price]

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PartNumber:: IRF9Z34NSTRLPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-07-13

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Part Number:IRF9Z34NSTRLPBF
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Product Summary

The IRF9Z34NSTRLPBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF9Z34NSTRLPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF9Z34NSTRLPBF is a surface mount power package capable of accommodating die sizes up to HEX-4.

Parametrics

IRF9Z34NSTRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: -19 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: -14 A; (3)IDM Pulsed Drain Current: -68 A; (4)PD @TC = 25℃ Power Dissipation: 3.8 W; (5)Linear Derating Factor: 0.45 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 180 mJ; (8)IAR Avalanche Current: -10 A; (9)EAR Repetitive Avalanche Energy: 6.8 mJ; (10)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 150 ℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.

Features

IRF9Z34NSTRLPBF features: (1)Advanced Process Technology; (2)Surface Mount; (3)175℃ Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.