(China (Mainland))
Product Summary
The AO4420 is a N-Channel Enhancement Mode Field Effect Transistor. The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications.
Parametrics
AO4420 absolute maximum ratings: (1)Pulsed Drain Current:60A; (2)Power Dissipation:TA=25℃:3.1W, TA=70℃:2W; (3)Gate-Source Voltage:±12V; (4)Drain-Source Voltage:30V; (5)Continuous Drain Current:TA=25℃:13.7A, TA=70℃:9.7A; (6)Junction and Storage Temperature Range:-55℃ to 150℃.
Features
AO4420 features: (1)VDS (V) = 30V; (2)ID = 13.7A; (3)RDS(ON) < 10.5mΩ (VGS = 10V); (4)RDS(ON) < 12mΩ (VGS = 4.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||
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 AO4420 |
Other |
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Data Sheet |
Negotiable |
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AO4420A |
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MOSFET N CH 30V 13.7A SOIC 8 |
Data Sheet |
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AO4420L |
Other |
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Data Sheet |
Negotiable |
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