IRF6612TRPBF

DirectFET Power MOSFET, 30V, 24A, 2.5mΩ, QFN, IRF6612TRPBF

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.71~0.71 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.71~0.71

PartNumber:: IRF6612TRPBF

Brand:: International Rectifier - IR | Pack: QFN | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Ella Wu's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-07-13

From Other Seller

Part Number:IRF6612TRPBF
US $0.71 - 0.71
EKXG401ELL6R8MJ16S

US $5.00 - 5.00 / Piece
(0) Remove
ECA1HHG4R7

US $10.00 - 10.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRF6612TRPBF is a DirectFET Power MOSFET. It combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6612TRPBF is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package of the IRF6612TRPBF allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Parametrics

IRF6612TRPBF absolute maximum ratings: (1)VDS Drain-to-Source Voltage: 30V; (2)VGS Gate-to-Source Voltage: ±20V; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 136A; (4)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 24A; (5)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 19A; (6)IDM Pulsed Drain Current: 190A; (7)EAS Single Pulse Avalanche Energy: 37mJ; (8)IAR Avalanche Current: 19A; (9)TJ TSTG Operating Junction and Storage Temperature Range: -40 to + 150 ℃.

Features

IRF6612TRPBF features: (1)RoHs Compliant; (2)Lead-Free (Qualified up to 260℃ Reflow); (3)Application Specific MOSFETs; (4)Ideal for CPU Core DC-DC Converters; (5)Low Conduction Losses; (6)High Cdv/dt Immunity; (7)Low Profile (<0.7mm); (8)Dual Sided Cooling Compatible; (9)Compatible with existing Surface Mount Techniques.