(China (Mainland))
Product Summary
The IPB80N06S2-05 is an OptiMOS Power-Transistor.
Parametrics
IPB80N06S2-05 absolute maximum ratings: (1)Continuous drain current1) ID TC=25 ℃, VGS=10 V: 80 A, TC=100 ℃, VGS=10 V: 80 A; (2)Pulsed drain current ID,pulse TC=25 ℃: 320 A; (3)Avalanche energy, single pulse EAS ID= 80 A: 810 mJ; (4)Gate source voltage VGS: ±20 V; (5)Power dissipation Ptot TC=25 ℃: 300 W; (6)Operating and storage temperature Tj, Tstg: -55 to +175 ℃.
Features
IPB80N06S2-05 features: (1)N-channel - Enhancement mode; (2)Automotive AEC Q101 qualified; (3)MSL1 up to 260℃ peak reflow; (4)175℃ operating temperature; (5)Green package (lead free); (6)Ultra low Rds(on); (7)100% Avalanche tested.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IPB80N06S2-05 |
Infineon Technologies |
MOSFET OptiMOS PWR TRANST 55V 80A |
Data Sheet |
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Other |
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Data Sheet |
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IPB80N04S2L-03 |
Infineon Technologies |
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Data Sheet |
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