(China (Mainland))
Product Summary
The FDS4435 is a 30 Volt P-Channel PowerTrench MOSFET. This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device FDS4435 is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Parametrics
FDS4435 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±25 V; (3)ID, Drain Current – Continuous: 8.8A; Pulsed: 50 A; (4)PD, Power Dissipation for Single Operation: 2.5 W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: –55 to +150℃.
Features
FDS4435 features: (1)–8.8 A, –30 V. RDS(ON) = 20 m? @ VGS = –10 V, RDS(ON) = 35 mΩ @ VGS = – 4.5 V; (2)Extended VGSS range (–25V) for battery applications; (3)HBM ESD protection level of ±4.5 kV typical; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability; (6)Termination is Lead-free and RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDS4435 |
Fairchild Semiconductor |
MOSFET SO-8 P-CH -30V |
Data Sheet |
Negotiable |
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FDS4435_NL |
Fairchild Semiconductor |
MOSFET P-CH -30V |
Data Sheet |
Negotiable |
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|
FDS4435BZ_F085 |
Fairchild Semiconductor |
MOSFET 30V P-Chan PowerTrench |
Data Sheet |
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FDS4435BZ |
Fairchild Semiconductor |
MOSFET 30V.PCH POWER TRENCH MOSFET |
Data Sheet |
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|
FDS4435A |
Fairchild Semiconductor |
MOSFET SO-8 P-CH -30V |
Data Sheet |
Negotiable |
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