Product Summary

The C2878 is a silicon NPN epitaxial type transistor. The device is suitable for muting and switching applications.

Parametrics

C2878 absolute maximum ratings: (1)Collector-base voltage, VCBO: 50 V; (2)Collector-emitter voltage, VCEO: 20 V; (3)Emitter-base voltage, VEBO: 25 V; (4)Collector current, IC: 300 mA; (5)Base current, IB: 60 mA; (6)Collector power dissipation, PC: 400 mW; (7)Junction temperature, T:j 125℃; (8)Storage temperature range, Tstg: -55~125℃.

Features

C2878 features: (1)High emitter-base voltage: VEBO = 25 V (min); (2)High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA); (3)Low on resistance: RON = 1 Ω(typ.) (IB = 5 mA).

Diagrams

C2878 dimension figure