Product Summary
The BD438 is a silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package. The device is intented for use in medium power linear and switching applications.
Parametrics
BD438 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 45 V; (2)VCES, Collector-Emitter Voltage (VBE = 0): 45 V; (3)VCEO, Collector-Emitter Voltage (IB = 0): 45 V; (4)VEBO, Emitter-Base Voltage (IC = 0): 5 V; (5)IC, Collector Current: 4 A; (6)ICM, Collector Peak Current (t≤ 10 ms): 7 A; (7)IB, Base Current 1 A; (8)Ptot, Total Dissipation at Tc≤ 25℃: 36 W; (9)Tstg, Storage Temperature: -65 to 150℃; (10)Tj, Max. Operating Junction Temperature: 150℃.
Features
BD438 features: (1)sgs-thomson preferred salestypes; (2)complementary PNP - NPN devices.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BD438S |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) PNP Epitaxial Sil |
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![]() BD438STU |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) PNP Epitaxial Sil |
![]() Data Sheet |
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![]() BD438G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 4A 45V 36W PNP |
![]() Data Sheet |
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![]() BD438 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) PNP Medium Power |
![]() Data Sheet |
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