Product Summary
The BD436 is a silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package. The device is intented for use in medium power linear and switching applications.
Parametrics
BD436 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 32V; (2)VCES, Collector-Emitter Voltage (VBE = 0): 32V; (3)VCEO, Collector-Emitter Voltage (IB = 0): 32V; (4)VEBO, Emitter-Base Voltage (IC = 0): 5 V; (5)IC, Collector Current: 4 A; (6)ICM, Collector Peak Current (t≤10 ms): 7 A; (7)IB, Base Current: 1 A; (8)Ptot, Total Dissipation at Tc≤25℃: 36 W; (9)Tstg, Storage Temperature: -65 to 150℃; (10)Tj, Max. Operating Junction Temperature: 150℃.
Features
BD436 features: (1)STMicroelectronics preferred salestype; (2)complementary PNP - NPN devices.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BD436 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP Medium Power |
Data Sheet |
Negotiable |
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BD436G |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 32V 36W PNP |
Data Sheet |
Negotiable |
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BD436S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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BD436STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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BD436T |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 32V 36W PNP |
Data Sheet |
Negotiable |
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BD436TG |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 32V 36W PNP |
Data Sheet |
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