Product Summary
The BCP5616T1 is an NPN silicon epitaxial transistor. The BCP5616T1 is designed for use in audio amplifier applications. The BCP5616T1 is housed in the SOT-223 package, which is designed for medium power surface mount applications.
Parametrics
BCP5616T1 absolute maximum ratings: (1)Collector-Emitter Voltage: 80 Vdc; (2)Collector-Base Voltage: 100 Vdc; (3)Emitter-Base Voltage: 5 Vdc; (4)Collector Current: 1 Adc; (5)Total Power Dissipation @ TA = 25℃ Derate above 25℃: 1.5 Watts, 12mW/℃; (6)Operating and Storage Temperature Range: -65℃ to 150℃.
Features
BCP5616T1 features: (1) High Current: 1.0 Amp; (2) The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; (3)Available in 12 mm Tape and Reel, Use BCP56T1 to order the 7 inch/1000 unit reel, Use BCP56T3 to order the 13 inch/4000 unit reel; (4)PNP Complement is BCP53T1.
Diagrams
BCP51 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 PNP GP AMP |
Data Sheet |
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BCP51 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
Negotiable |
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BCP51,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
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BCP51_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 PNP GP AMP |
Data Sheet |
Negotiable |
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BCP51-10 |
Other |
Data Sheet |
Negotiable |
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BCP51-10 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
Negotiable |
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